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| ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT6505MG TECHNICAL DATA Visible Wavelength Laserdiode Structure: AlGaInP, index guided, single transverse mode Lasing wavelength: 650 nm NOTE! Max. optical power: 5 mW LASERDIODE Package: 5.6 mm MUST BE COOLED! PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode Maximum Ratings (Tc=25C) CHARACTERISTIC Optical Output Power LD Reverse Voltage PD Reverse Voltage Operation Case Temperature Storage Temperature SYMBOL Po VR(LD) VR(PD) TC TSTG RATING 5 2 30 -10 .. +40 -40 .. +85 UNIT mW V V C C Optical-Electrical Characteristics (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Optical Output Power Po kink free Threshold Current Ith cw Operation Current Iop Po = 5 mW Operating Voltage Vop Po = 5 mW Lasing Wavelength lp Po = 5 mW Beam Divergence Po = 5 mW // Beam Divergence Po = 5 mW Astigmatism As Po =5mW, NA=0.4 Monitor Current Im Po = 5 mW, Vr=5V MIN 20 TYP 30 45 2.2 650 8 31 11 10 5 25 MAX 5 40 70 2.7 655 11 37 200 UNIT mW mA mA V nm m A |
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